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NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, N?Channel, ESD Protected,
1:250 Current Mirror, SO?8 Leadless
http://onsemi.com
N?Channel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
V DSS
24 V
R DS(on) Typ
12 m W @ 4.5 V
I D MAX
9.5 A
transfer.
Mirror FET
Features
? Current Sense MOSFET
? " 15% Current Mirror Accuracy
? ESD Protected on the Main and the Mirror MOSFET
? Low Gate Charge
? Pb?Free Package is Available*
Applications
Gate
N?Channel with Current
Drain
Main
? DC?DC Converters
? Voltage Regulator Modules
? Small DC Motor Controls
Sense
PLLP4
CASE 508AA
Source
MARKING
DIAGRAM
4501N
AYWW
G
4501N
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
PIN CONNECTIONS
Sense (1)
Drain (4)
Source (2)
Gate (3)
(Bottom View)
ORDERING INFORMATION
Device
NILMS4501NR2
NILMS4501NR2G
Package
PLLP4
PLLP4
(Pb?Free)
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
May, 2006 ? Rev. 4
1
Publication Order Number:
NILMS4501N/D
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